ISSN 0004-881X

Mapping of Elemental Composition in Air-Oxidized Ti₃SiC₂

by W. K. Pang ^1*, I.M. Low¹, K. E. Prince² and A. J. Atanacio²

1) Centre for Materials Research, Department of Imaging and Applied Physics, Curtin University of Technology,
GPO Box U 1987, Perth WA, Australia
2) ANSTO, PMB 1, Menai, NSW 2234, Australia

Abstract

Depth-profiling of elemental composition at the near surface of air-oxidized Ti₃SiC₂ was studied by secondary ion mass spectrometry (SIMS). The duplex microstructure of oxides formed at air-oxidized Ti₃SiC₂ surface was observed which consisted of an outer uniform layer of rutile-TiO2 and an inner graded layer of TiO2 and SiO2. The thickness of oxide scales increased with an increase in temperature. Ti₃SiC₂ is resistant to oxidation in air at up to 1100°C.

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