ISSN 0004-881X

Microstructure and Thermal Diffusivity of Al2O3-SiO2-Based Substrate with Varied Sintering Temperatures

by *R. Alias, A. Ibrahim, S. M. Shapee, Z. Ambak, Z. M. Yusoff and M. R. Saad

Microelectronics and Nano Technology Program,
TM Research & Development Sdn. Bhd.,
TMR&D Innovation Centre, Lingkaran Teknokrat Timur, 63000 Cyberjaya, Selangor,Malaysia.

Abstract

An Al₂O₃-SiO₂-based substrate was prepared by laminating five layers of tape each 0.35 mm to study the effects of different sintering temperatures; 840 degC, 880 degC, 920 degC and 960 degC on thermal diffusivity, density and microstructure. Increasing sintering temperature was generally improved densification process of the tape system. Determination of the crystal structure was carried out by X-ray analysis and the results showed that the unknown phase was observed for the samples sintered at 840 degC and 880 degC. The firing beyond 880 degC, the extra peak was disappeared. Thermal diffusivity was measured by a flash method and was found to have slightly fluctuating values with increase the sintering temperature. Microstructural changes were also observed to determine a variation in a grain size distribution. It was found that the average grain size shows an increasing trend with increasing sintering temperature. However, the density and the volume fraction did not show a definite trend with increasing sintering temperature. The results also demonstrate that the thermal diffusivity varied inconsistently with increasing sintering temperature. Since thermal diffusivity is generally known to depend on both sample microstructure and crystallinity, it is believed to be dependent on these factors in a complex manner.

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