ISSN 0004-881X

Atomic Layer Deposition of Nitrogen-Doped Titanium Dioxide Films Using Titanium Chloride and Ammonia Water as the Precursors

by Hsyi-En Cheng*, Meng-Rong Lee, Yu-Hung Hsieh, Ching-Ming Hsu

Department of Electro-Optical Engineering, Southern Taiwan University, Tainan 710, Taiwan

Abstract

Nitrogen-doped TiO₂ films were grown on n⁺ -silicon substrates by atomic layer deposition with titanium chloride and ammonia water as the precursors. The effects of deposition parameters on the microstructure and photoresponse properties of as-deposited films were investigated. The results showed that the films were amorphous at 200 degC, anatase-crystalline at 300-500 degC, and rutile-crystalline at 600 degC for the NH₃-to-H₂O injection ratio of 230, but TiON and TiN instead of TiO₂ were formed at 600 degC for the NH₃-to-H₂O injection ratio of 420. The grain size of films changed with the deposition temperature and had a minimum at around 400 degC. The photocurrent and water contact angle of as-deposited films were related to the nitrogen doping amount and film microstructure. With an appropriate deposition condition, anatase TiO₂ films with high visible light photoresponse have been obtained.

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