Journal of the Australian Ceramics Society
Volume 45, Number 1, 2009

ISSN 0004-881X

Effect of Vacuum Annealing on the Thermal Stability of Ti3SiC2/TiC/TiSi2 Composites

by W.K. Pang1, I.M. Low1, B.H. O'Connor1, A.J. Studer2, V.K. Peterson2 and J.-P. Palmquist3

1) Centre for Materials Research, Department of Imaging and Applied Physics, Curtin University of Technology, GPO Box U 1987, Perth WA, Australia.
2) The Bragg Institute, ANSTO, PMB 1, Menai, NSW 2234, Australia
3) Kanthal AB, Heating Systems R&D, P.O. Box 502, SE-734 27 Hallstahammar, Sweden.

Abstract

Titanium silicon carbide (Ti3SiC2) possesses a unique combination of properties of both metals and ceramics, for it is thermally shock resistant, thermally and electrically conductive, damage tolerant, lightweight, highly oxidation resistant, elastically stiff, and mechanically machinable. In this research, the effect of high vacuum annealing on the phase stability and phase transitions of Ti3SiC2/TiC/TiSi2 composites up to 1550 deg C was studied using in-situ neutron diffraction. The role of TiC and TiSi2 on the thermal stability of Ti3SiC2 during vacuum annealing is discussed. TiC reacts with TiSi2 between 1400-1450 deg C to form Ti3SiC2. Above 1400 deg C, decomposition of Ti3SiC2 into TiC commenced and the rate increased with increased temperature and dwell time. Furthermore, the activation energy for the formati Titanium silicon carbide (Ti3SiC2) possesses a unique combination of properties of both metals and ceramics, for it is thermally shock resistant, thermally and electrically conductive, damage tolerant, lightweight, highly oxidation resistant, elastically stiff, and mechanically machinable. In this research, the effect of high vacuum annealing on the phase stability and phase transitions of Ti3SiC2/TiC/TiSi2 composites up to 1550 deg C was studied using in-situ neutron diffraction. The role of TiC and TiSi2 on the thermal stability of Ti3SiC2 during vacuum annealing is discussed. TiC reacts with TiSi2 between 1400-1450 deg C to form Ti3SiC2. Above 1400 deg C, decomposition of Ti3SiC2 into TiC commenced and the rate increased with increased temperature and dwell time. Furthermore, the activation energy for the formation and decomposition of Ti3SiC2 was determined. on and decomposition of Ti3SiC2 was determined.

 

Full Paper (PDF) | Table of Contents

Our Corporate Members: