1) Electronic Material Research Lab, School of Engineering and Physical Sciences,
James Cook University, Townsville QLD 4811, Australia
2) School of physics, University of Hyderabad, Hyderabad, India-500046

Abstract

Ceramic samples with low sintering temperature were prepared by solid state reaction from the respective high purity oxide powders. Bi₂ (Zn _2/3-x/3Nb_4/3-2x/3Ti _x)O₇ were sintered below 900 degree Celcius and the density is above 90%. The frequency dependent dielectric properties of these ceramics up to 1MHz were measured using Agilent 4294A impedance analyser. The dielectric properties of Bi₂ (Zn _2/3-x/3Nb_4/3-2x/3Ti _x)O₇ceramics with x = 0 to 0.4 were estimated at microwave frequencies from room temperature to 15 K using Dielectric Post (DP) resonator techniques. The high dielectric permittivity together with the low sintering temperature will make this material an attractive candidate for LTCC applications.

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