ISSN 0004-881X

Semiconducting Properties of Single Crystal TiO₂ in the N-P Transition Region

by M.K. Nowotny*, T. Bak, J. Nowotny, L.R. Sheppard

Centre forMaterials Research in Energy Conversion, School of Materials Science and Engineering
University of New South Wales, NSW 2052, Australia

Abstract

This work considers the effect of ionic charge carriers on the semiconducting properties of undoped TiO₂ single crystal in the n-p transition region. The semiconducting properties were characterised by using the measurements of electrical conductivity and thermoelectric power at elevated temperatures (1073-1323K) and in a gas phase of controlled oxygen activity [10 Pa < p(O₂) < 75 kPa]. These data are considered in terms of the TiO₂ defect disorder model. Individual conductivity components, associated with electronic and ionic charge carriers, indicate that the ionic component of electrical conductivity assumes significant values, which cannot be ignored. Its activation energy is 227 kJ/mol. .

Full Paper (PDF) | Table of Contents